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Author: Steven E. Butner,Stephen I. Long
ISBN13: 978-0070386877
Title: Gallium Arsenide Digital Integrated Circuit Design (McGraw-Hill series in electrical engineering)
Format: lit mobi azw mbr
ePUB size: 1279 kb
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Language: English
Category: Engineering
Publisher: McGraw-Hill College (March 1, 1990)
Pages: 486

Gallium Arsenide Digital Integrated Circuit Design (McGraw-Hill series in electrical engineering) by Steven E. Butner,Stephen I. Long

FREE shipping on qualifying offers. A guide to the use of GaAs FET's for the design of dependable, high-speed digital IC's intended for use in gallium arsenide digital design courses. Presented through a digital IC design orientation. Publisher: McGraw-Hill College (March 1, 1990). ISBN-13: 978-0070386877. Product Dimensions: 7 x 1 x . inches. Shipping Weight: 2 pounds (View shipping rates and policies).

Published 1990 by McGraw-Hill in New York. Design and construction, Digital integrated circuits, Gallium arsenide semiconductors. Includes bibliographical references and index. McGraw-Hill series in electrical engineering.

Gallium Arsenide Digital Integrated Circuit Design McGraw Hill series in electrical engineering.

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S. I. Long and S. E. Butner, Gallium Arsenide Digital Integrated Circuit Design, McGraw-Hill, 1990. L. Yang, R. Chakharapani, and S. Long, " A High-Speed Dynamic Domino Circuit Implemented with 225 I GaAs MESFET's, " IEEE J. Solad-State Circuits, Vol. 92-22, NO. 5, pp. 874-879, Oct. 1987. D. H. K. Hoe and C. A. T. Salama, ''Dynamic GaAs Capacitively Coupled Domino Logic (CCDL), " IEEE J. Solid-State Circuits, Vol. 26, No. 6, pp. 844-849, Jun.

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I. Butner. Gallium Arsenide Digital Integrated Circuit Design. McGraw-Hill, New York, 1990. Asynchronous datapaths and the design of an asynchronous adder. Formal Methods in System Design, 1 (1): 117–137, 1992. Private communication, 1992. Designing asynchronous circuits in Gallium Arsenide. CS-TR-92–19, California Institute of Technology, 1992. Cite this chapter as: Tierno . 1995) An Asynchronous Microprocessor in Gallium Arsenide. In: Saucier . Mignotte A. (eds) Logic and Architecture Synthesis. IFIP Advances in Information and Communication Technology.

In engineering electronics this is the era of very large-scale integration (VLSI). This is the first authoritative text to trace the important steps in the evolution of IC processes-from the early p-channel MOS technology, through PMOS and NMOS, to the state of the art in CMOS VLSI. Concurrent advances in wafer fabrication are also described. The practical applications-of standard circuits, custom ICs, and high lead count IC packages, for example-are then examined from the standpoint of suppliers and customers.

oceedings{Long1990GalliumAD, title {Gallium arsenide digital integrated circuit design}, author {Stephen I. Long and Steven E. Butner}, year {1990} }. Stephen I. Long, Steven E. One day, you will discover a new adventure and knowledge by spending more money. It is your own time to continue reading habit. One of the books you can enjoy now is gallium arsenide digital integrated circuit design here.

Gallium Arsenide Integrated Circuits 1988 ANZAAS Congress, VLSI Section Anthony E. Parker Laboratory for Communication Science and Engineering, Sydney University Electrical Engineering Gallium Arsenide (GaAs) is a key ‘enabling’ technology with superior speed-power product that permits the development of systems that have been impossible or impractical to construct using silicon semiconductors. As a result, GaAs integrated circuits are found increasingly in very high performance systems in communications, computers and instrumentation. The challenge is to implement the design by developing the high speed potential of Gallium Arsenide digital integrated circuit technology. The present state-of-the-art in GaAs digital circuits is larger and more power hungry than their silicon equivalents. However, the speed advantage outweighs the disadvantages.